NCE30P15S datasheet, mosfet equivalent, NCE Power Semiconductor

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Features and benefits

* VDS = -30V,ID = -15A RDS(ON) < 12mΩ @ VGS=-10V Schematic diagram
* High power and current handing capability
* Lead free product is acquired
* Surface.

Application

General Features
* VDS = -30V,ID = -15A RDS(ON) < 12mΩ @ VGS=-10V Schematic diagram
* High power and current.

Description

The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features
* VDS = -30V,ID = -15A RDS(ON) < 12mΩ @ VGS=-10V Schematic diagram
* High.

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